JPH0334649B2 - - Google Patents

Info

Publication number
JPH0334649B2
JPH0334649B2 JP15514881A JP15514881A JPH0334649B2 JP H0334649 B2 JPH0334649 B2 JP H0334649B2 JP 15514881 A JP15514881 A JP 15514881A JP 15514881 A JP15514881 A JP 15514881A JP H0334649 B2 JPH0334649 B2 JP H0334649B2
Authority
JP
Japan
Prior art keywords
ion
layer
ion implantation
implanted
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15514881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856417A (ja
Inventor
Kei Kirita
Katsuo Koike
Hirosaku Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP15514881A priority Critical patent/JPS5856417A/ja
Publication of JPS5856417A publication Critical patent/JPS5856417A/ja
Publication of JPH0334649B2 publication Critical patent/JPH0334649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP15514881A 1981-09-30 1981-09-30 半導体装置の製造方法 Granted JPS5856417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15514881A JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15514881A JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856417A JPS5856417A (ja) 1983-04-04
JPH0334649B2 true JPH0334649B2 (en]) 1991-05-23

Family

ID=15599580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15514881A Granted JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856417A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2055818A1 (en) 2007-10-30 2009-05-06 TMT Machinery, Inc. Interlacing device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000694A1 (en) * 1983-07-25 1985-02-14 American Telephone & Telegraph Company Shallow-junction semiconductor devices
FR2602093B1 (fr) * 1985-12-27 1988-10-14 Bull Sa Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant
JPS6476760A (en) * 1987-09-18 1989-03-22 Toshiba Corp Manufacture of semiconductor device
JP2522217B2 (ja) * 1990-12-27 1996-08-07 株式会社島津製作所 イオン注入により生じたシリコン結晶欠陥の抑制方法
US5298434A (en) * 1992-02-07 1994-03-29 Harris Corporation Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits
JP2919254B2 (ja) * 1993-11-22 1999-07-12 日本電気株式会社 半導体装置の製造方法および形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2055818A1 (en) 2007-10-30 2009-05-06 TMT Machinery, Inc. Interlacing device

Also Published As

Publication number Publication date
JPS5856417A (ja) 1983-04-04

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